Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS2 heterostructures

• Main Authors: Xiaoyan Guo, Guohui Yang, Junfeng Zhang, Xiaohong Xu
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2015-09-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.4932040

Two-dimensional (2D) molybdenum disulfide (MoS2) phase hybrid system composed by 2H and 1T phase is a natural metal/semiconductor heterostructures and promised a wide range of potential applications. Here, we report the first principle investigations on the structural, mechanical and electronic properties of hybrid system with armchair (AC) and zigzag (ZZ) interfaces. The ZZ type 1T/2H interface are more energy favorable than AC type interface with 3.39 eV/nm. Similar with that of bulked 1T MoS2, the intrinsic strengths of the heterostructures are lower than that of the bulk 2H, especially for that with ZZ interface. Analysis of density of states shows that the electronic properties gradually transmitted from the metallic 1T phase to the semiconducting 2H phase for the structural abrupt interface. The present theoretical results constitute a useful picture for the 2D electronic devices using current MoS2 1T/2H heterostructures and provide vital insights into the other 2D hybrid materials.