High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

• Main Authors: Rashtian M, Khatir A, Keshavarzian P, Navi K, Hashemipour O
• Format: Article
• Language: English
• Published: SpringerOpen 2010-01-01
• Series: Nanoscale Research Letters
• Subjects: Full Adder; Carbon nanotube; Carbon nanotube field effect transistor; High speed; High performance
• Online Access: http://dx.doi.org/10.1007/s11671-010-9575-4
• ISSN: 1931-7573; 1556-276X

<p>Abstract</p> <p>Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.</p>