Numerical Analysis on Polarization-Induced Doping III-Nitride n-i-p Solar Cells

We design and numerically evaluate a new type of III-nitride n-i-p solar cells whose p- and n-type regions with equal carrier concentration of 3 &#x00D7; 10<sup>18</sup> cm<sup>-3</sup> are not generated by extrinsic impurity doping but by the so-called polarization-induc...

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Bibliographic Details
Main Authors: Ya-Ju Lee, Yung-Chi Yao, Zu-Po Yang
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7014228/