Numerical Analysis on Polarization-Induced Doping III-Nitride n-i-p Solar Cells
We design and numerically evaluate a new type of III-nitride n-i-p solar cells whose p- and n-type regions with equal carrier concentration of 3 × 10<sup>18</sup> cm<sup>-3</sup> are not generated by extrinsic impurity doping but by the so-called polarization-induc...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7014228/ |