Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 thickness for implantation in p-enrichment region. T...

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Main Authors: Ran He, Guangqing Yan, Jian Liu, Wenxuan Cheng, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han
Format: Article
Language:English
Published: Elsevier 2018-03-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379717318120
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spelling doaj-74676fd1156f4dadb5a29f254015a4ff2020-11-24T23:47:56ZengElsevierResults in Physics2211-37972018-03-0187678Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCADRan He0Guangqing Yan1Jian Liu2Wenxuan Cheng3Rongdan Liu4Kun Liang5Ru Yang6Dejun Han7College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCollege of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCollege of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCollege of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCollege of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCollege of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCorresponding author.; College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaCollege of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, ChinaThis paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 thickness for implantation in p-enrichment region. The simulation results indicate that the breakdown voltage decreases linearly with the implantation dose and a high implantation energy can minimize the impact of the screening SiO2 thickness on the breakdown voltage. Additionally, some key process parameters implemented in coming fabrication have been obtained. Keywords: Silicon photomultiplier, Backside-illumination, Breakdown voltage, TCAD simulationhttp://www.sciencedirect.com/science/article/pii/S2211379717318120
collection DOAJ
language English
format Article
sources DOAJ
author Ran He
Guangqing Yan
Jian Liu
Wenxuan Cheng
Rongdan Liu
Kun Liang
Ru Yang
Dejun Han
spellingShingle Ran He
Guangqing Yan
Jian Liu
Wenxuan Cheng
Rongdan Liu
Kun Liang
Ru Yang
Dejun Han
Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD
Results in Physics
author_facet Ran He
Guangqing Yan
Jian Liu
Wenxuan Cheng
Rongdan Liu
Kun Liang
Ru Yang
Dejun Han
author_sort Ran He
title Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD
title_short Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD
title_full Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD
title_fullStr Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD
title_full_unstemmed Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD
title_sort simulations of the breakdown characteristics of n-on-p backside-illumination silicon photomultipliers by tcad
publisher Elsevier
series Results in Physics
issn 2211-3797
publishDate 2018-03-01
description This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 thickness for implantation in p-enrichment region. The simulation results indicate that the breakdown voltage decreases linearly with the implantation dose and a high implantation energy can minimize the impact of the screening SiO2 thickness on the breakdown voltage. Additionally, some key process parameters implemented in coming fabrication have been obtained. Keywords: Silicon photomultiplier, Backside-illumination, Breakdown voltage, TCAD simulation
url http://www.sciencedirect.com/science/article/pii/S2211379717318120
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