Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD

This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 thickness for implantation in p-enrichment region. T...

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Bibliographic Details
Main Authors: Ran He, Guangqing Yan, Jian Liu, Wenxuan Cheng, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han
Format: Article
Language:English
Published: Elsevier 2018-03-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379717318120
Description
Summary:This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 thickness for implantation in p-enrichment region. The simulation results indicate that the breakdown voltage decreases linearly with the implantation dose and a high implantation energy can minimize the impact of the screening SiO2 thickness on the breakdown voltage. Additionally, some key process parameters implemented in coming fabrication have been obtained. Keywords: Silicon photomultiplier, Backside-illumination, Breakdown voltage, TCAD simulation
ISSN:2211-3797

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