Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available pow...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213497 |