Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available pow...

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Main Author: K. F. Yarn
Format: Article
Language:English
Published: Hindawi Limited 2002-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1080/08827510213497
id doaj-73aef8dcedfc421d96a99548c86d7f7b
record_format Article
spelling doaj-73aef8dcedfc421d96a99548c86d7f7b2020-11-24T20:57:58ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312002-01-0125324524810.1080/08827510213497Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVDK. F. Yarn0Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih Tainan Taiwan 744, ChinaAn AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2 . The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.http://dx.doi.org/10.1080/08827510213497
collection DOAJ
language English
format Article
sources DOAJ
author K. F. Yarn
spellingShingle K. F. Yarn
Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
Active and Passive Electronic Components
author_facet K. F. Yarn
author_sort K. F. Yarn
title Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
title_short Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
title_full Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
title_fullStr Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
title_full_unstemmed Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
title_sort negative differential resistance behavior in delta-doped alinp structure grown by mocvd
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2002-01-01
description An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2 . The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.
url http://dx.doi.org/10.1080/08827510213497
work_keys_str_mv AT kfyarn negativedifferentialresistancebehaviorindeltadopedalinpstructuregrownbymocvd
_version_ 1716786939368046592

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