Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available pow...
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213497 |
| Summary: | An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR)
behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2
were
achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2
. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface. |
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| ISSN: | 0882-7516 1563-5031 |