Mechanical strain in the structure of array of silicon nanowires grown on a silicon substrate

Mechanical strain in the structure of array of silicon nanowires grown on a silicon substrate

We present experimental research on mechanical strains in the structure consisting of an array of silicon nanowires grown using the metal-enhanced CVD technique on boron-doped Si(111) and Si(100) substrates. Using the electron beam induced current on a cleaved substrate, electron spin resonance, and...

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Bibliographic Details
Main Author: A.I. Klimovskaya
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2019-09-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
array of silicon nanowires
mechanical strain
polymorphism of wires
cvd-technology
gold-enhanced growth
Online Access:http://journal-spqeo.org.ua/n3_2019/P293-298abstr.html

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