Improvement in electrical characteristics of Silicon on Insulator (SOI) transistor using graphene material
This paper presents the electrical characteristics of a short channel Silicon on Insulator (SOI) transistor with a graphene layer. The graphene sheet is used at the bottom of the channel close to the source side and a proportionally heavily p-type retrograde doping implanted in nearly middle of the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-12-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137971932769X |