Weak ferromagnetism of (Fe1-xNix)Si with B20 structure
Magnetic and electrical properties of Ni doped (Fe1-xNix)Si (x=0-0.5) have been studied by measuring magnetization, magnetic susceptibility and electrical resistivity. FeSi compound (x = 0) shows a weak ferromagnetic property at 2.0 K with small magnetization about 0.07 μB/f.u. at 50 kOe; high tempe...
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doaj-72bf7b92c14d4fa5a788850434f7f1942020-11-24T21:08:04ZengAIP Publishing LLCAIP Advances2158-32262018-10-01810101406101406-410.1063/1.5041872010893ADVWeak ferromagnetism of (Fe1-xNix)Si with B20 structureTakanori Tsutaoka0Kenshiro Kaneshige1Koyo Ueda2Graduate School of Education, Hiroshima University, 1-1-1, Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8524, JapanGraduate School of Education, Hiroshima University, 1-1-1, Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8524, JapanGraduate School of Education, Hiroshima University, 1-1-1, Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8524, JapanMagnetic and electrical properties of Ni doped (Fe1-xNix)Si (x=0-0.5) have been studied by measuring magnetization, magnetic susceptibility and electrical resistivity. FeSi compound (x = 0) shows a weak ferromagnetic property at 2.0 K with small magnetization about 0.07 μB/f.u. at 50 kOe; high temperature magnetic susceptibility suggests paramagnetic property. By the substitution of Fe by Ni, low temperature weak ferromagnetic state is suppressed; magnetization continuously decreases with increasing x up to 0.5. Magnetic susceptibility shows Curie type temperature variation at low temperature; paramagnetic susceptibility does not obey the Curie-Weiss law for all samples. The electrical resistivity of (Fe1-xNix)Si indicates a semiconductive property at x = 0. The low temperature resistivity is substantially suppressed with increasing x; semimetallic and metallic property appears at x = 0.2 and 0.4, respectively.http://dx.doi.org/10.1063/1.5041872 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Takanori Tsutaoka Kenshiro Kaneshige Koyo Ueda |
spellingShingle |
Takanori Tsutaoka Kenshiro Kaneshige Koyo Ueda Weak ferromagnetism of (Fe1-xNix)Si with B20 structure AIP Advances |
author_facet |
Takanori Tsutaoka Kenshiro Kaneshige Koyo Ueda |
author_sort |
Takanori Tsutaoka |
title |
Weak ferromagnetism of (Fe1-xNix)Si with B20 structure |
title_short |
Weak ferromagnetism of (Fe1-xNix)Si with B20 structure |
title_full |
Weak ferromagnetism of (Fe1-xNix)Si with B20 structure |
title_fullStr |
Weak ferromagnetism of (Fe1-xNix)Si with B20 structure |
title_full_unstemmed |
Weak ferromagnetism of (Fe1-xNix)Si with B20 structure |
title_sort |
weak ferromagnetism of (fe1-xnix)si with b20 structure |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2018-10-01 |
description |
Magnetic and electrical properties of Ni doped (Fe1-xNix)Si (x=0-0.5) have been studied by measuring magnetization, magnetic susceptibility and electrical resistivity. FeSi compound (x = 0) shows a weak ferromagnetic property at 2.0 K with small magnetization about 0.07 μB/f.u. at 50 kOe; high temperature magnetic susceptibility suggests paramagnetic property. By the substitution of Fe by Ni, low temperature weak ferromagnetic state is suppressed; magnetization continuously decreases with increasing x up to 0.5. Magnetic susceptibility shows Curie type temperature variation at low temperature; paramagnetic susceptibility does not obey the Curie-Weiss law for all samples. The electrical resistivity of (Fe1-xNix)Si indicates a semiconductive property at x = 0. The low temperature resistivity is substantially suppressed with increasing x; semimetallic and metallic property appears at x = 0.2 and 0.4, respectively. |
url |
http://dx.doi.org/10.1063/1.5041872 |
work_keys_str_mv |
AT takanoritsutaoka weakferromagnetismoffe1xnixsiwithb20structure AT kenshirokaneshige weakferromagnetismoffe1xnixsiwithb20structure AT koyoueda weakferromagnetismoffe1xnixsiwithb20structure |
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1716761050043383808 |