Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering

Cu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, such as working pressure, target powers, and postannealing atmosphere, were optimized for CZTS films deposition. A comparative study between post annealing using sulfur vapor in a quartz tube furnace...

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Main Authors: Arun Khalkar, Kwang-Soo Lim, Seong-Man Yu, Shashikant P. Patole, Ji-Beom Yoo
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/690165
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spelling doaj-7227431a610d42fdb9f8100b55d2a4562020-11-25T00:11:00ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/690165690165Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by CosputteringArun Khalkar0Kwang-Soo Lim1Seong-Man Yu2Shashikant P. Patole3Ji-Beom Yoo4SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440746, Republic of KoreaSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440746, Republic of KoreaSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440746, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440746, Republic of KoreaSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440746, Republic of KoreaCu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, such as working pressure, target powers, and postannealing atmosphere, were optimized for CZTS films deposition. A comparative study between post annealing using sulfur vapor in a quartz tube furnace and sulfurization chamber using H2S gas was carried out to optimize the kesterite Cu2ZnSnS4 phase. 10 min annealing at 530°C in the furnace in sulfur vapor eliminated all the secondary phases and formed kesterite Cu2ZnSnS4. The diffusion of sulfur in the film during the annealing process enhanced the crystallinity of the film. The kesterite Cu2ZnSnS4 phase was confirmed by X-ray diffraction, Raman scattering, and optical measurements. The film showed phonon peaks corresponding to the kesterite CZTS, high-absorption coefficient (1.1 × 105 cm−1), and desired optical direct band gap (1.5 eV).http://dx.doi.org/10.1155/2013/690165
collection DOAJ
language English
format Article
sources DOAJ
author Arun Khalkar
Kwang-Soo Lim
Seong-Man Yu
Shashikant P. Patole
Ji-Beom Yoo
spellingShingle Arun Khalkar
Kwang-Soo Lim
Seong-Man Yu
Shashikant P. Patole
Ji-Beom Yoo
Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
International Journal of Photoenergy
author_facet Arun Khalkar
Kwang-Soo Lim
Seong-Man Yu
Shashikant P. Patole
Ji-Beom Yoo
author_sort Arun Khalkar
title Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
title_short Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
title_full Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
title_fullStr Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
title_full_unstemmed Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering
title_sort effect of growth parameters and annealing atmosphere on the properties of cu2znsns4 thin films deposited by cosputtering
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2013-01-01
description Cu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, such as working pressure, target powers, and postannealing atmosphere, were optimized for CZTS films deposition. A comparative study between post annealing using sulfur vapor in a quartz tube furnace and sulfurization chamber using H2S gas was carried out to optimize the kesterite Cu2ZnSnS4 phase. 10 min annealing at 530°C in the furnace in sulfur vapor eliminated all the secondary phases and formed kesterite Cu2ZnSnS4. The diffusion of sulfur in the film during the annealing process enhanced the crystallinity of the film. The kesterite Cu2ZnSnS4 phase was confirmed by X-ray diffraction, Raman scattering, and optical measurements. The film showed phonon peaks corresponding to the kesterite CZTS, high-absorption coefficient (1.1 × 105 cm−1), and desired optical direct band gap (1.5 eV).
url http://dx.doi.org/10.1155/2013/690165
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