Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si
In this article, we investigate the redistribution of implanted As+ ion and effect of it on the rate of oxide growth during steam oxidation of Si wafers at 900oC. Our results show that a highly enriched, thin layer of Arsenic forms at the interface between the oxide and the underlying Si. Also, the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Isfahan University of Technology
2005-12-01
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| Series: | Iranian Journal of Physics Research |
| Subjects: | |
| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-216&slc_lang=en&sid=1 |