Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after the substrate temperature reaches the growth tempera...

Full description

Bibliographic Details
Main Authors: Katsuhiro Kishimoto, Mitsuru Funato, Yoichi Kawakami
Format: Article
Language:English
Published: MDPI AG 2017-04-01
Series:Crystals
Subjects:
AlN
Online Access:http://www.mdpi.com/2073-4352/7/5/123

Similar Items