Preparation of Aniline-Based Nitrogen-Containing Diamond-Like Carbon Films with Low Electrical Resistivity

• Main Authors: Ruriko Hatada, Stefan Flege, Wolfgang Ensinger, Sabine Hesse, Shuji Tanabe, Yasuhisa Nishimura, Koumei Baba
• Format: Article
• Language: English
• Published: MDPI AG 2020-01-01
• Series: Coatings
• Subjects: diamond-like carbon; aniline; electrical resistivity; plasma-enhanced chemical vapor deposition; plasma source ion implantation
• Online Access: https://www.mdpi.com/2079-6412/10/1/54

The intrinsic high electrical resistivity of diamond-like carbon (DLC) films prevents their use in certain applications. The addition of metal or nitrogen during the preparation of the DLC films leads to a lower resistivity of the films, but it is usually accompanied by several disadvantages, such as a potential contamination risk for surfaces in contact with the film, a limited area that can be coated, deteriorated mechanical properties or low deposition rates of the films. To avoid these problems, DLC films have been prepared by plasma source ion implantation using aniline as a precursor gas, either in pure form or mixed with acetylene. The nitrogen from the precursor aniline is incorporated into the DLC films, leading to a reduced electrical resistivity. Film properties such as hardness, surface roughness and friction coefficient are nearly unchanged as compared to an additionally prepared reference sample, which was deposited using only pure acetylene as precursor gas.