The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

Abstract The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple q...

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Bibliographic Details
Main Authors: Shengjun Zhou, Xingtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao, Zhijue Quan, Chengqun Gui, Sheng Liu
Format: Article
Language:English
Published: Nature Publishing Group 2018-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-018-29440-4

Internet

https://doi.org/10.1038/s41598-018-29440-4

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