Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ<sub&g...

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Main Authors:	Mariano Gioffré, Giuseppe Coppola, Mario Iodice, Maurizio Casalino
Format:	Article
Language:	English
Published:	MDPI AG 2018-11-01
Series:	Sensors
Subjects:	silicon near-infrared photodetectors internal photoemission erbium
Online Access:	https://www.mdpi.com/1424-8220/18/11/3755

id	doaj-7152ccc8c9494f8dade1d07ef016ae78
record_format	Article
spelling	doaj-7152ccc8c9494f8dade1d07ef016ae782020-11-25T00:37:13ZengMDPI AGSensors1424-82202018-11-011811375510.3390/s18113755s18113755Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon JunctionsMariano Gioffré0Giuseppe Coppola1Mario Iodice2Maurizio Casalino3Institute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, ItalyInstitute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, ItalyInstitute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, ItalyInstitute for Microelectronics and Microsystems, National Research Council, I-80131 Napoli, ItalyThis paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ<sub>B</sub> of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.https://www.mdpi.com/1424-8220/18/11/3755siliconnear-infraredphotodetectorsinternal photoemissionerbium
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Mariano Gioffré Giuseppe Coppola Mario Iodice Maurizio Casalino
spellingShingle	Mariano Gioffré Giuseppe Coppola Mario Iodice Maurizio Casalino Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions Sensors silicon near-infrared photodetectors internal photoemission erbium
author_facet	Mariano Gioffré Giuseppe Coppola Mario Iodice Maurizio Casalino
author_sort	Mariano Gioffré
title	Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
title_short	Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
title_full	Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
title_fullStr	Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
title_full_unstemmed	Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
title_sort	integrable near-infrared photodetectors based on hybrid erbium/silicon junctions
publisher	MDPI AG
series	Sensors
issn	1424-8220
publishDate	2018-11-01
description	This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ<sub>B</sub> of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.
topic	silicon near-infrared photodetectors internal photoemission erbium
url	https://www.mdpi.com/1424-8220/18/11/3755
work_keys_str_mv	AT marianogioffre integrablenearinfraredphotodetectorsbasedonhybriderbiumsiliconjunctions AT giuseppecoppola integrablenearinfraredphotodetectorsbasedonhybriderbiumsiliconjunctions AT marioiodice integrablenearinfraredphotodetectorsbasedonhybriderbiumsiliconjunctions AT mauriziocasalino integrablenearinfraredphotodetectorsbasedonhybriderbiumsiliconjunctions
_version_	1725301922587475968

Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

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