An Analytical Gate-All-Around MOSFET Model for Circuit Simulation
A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson’s equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
|
| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/320320 |