Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope effic...

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Main Authors: Rongbin Xu, Yang Mei, Huan Xu, Tianrui Yang, Leiying Ying, Zhiwei Zheng, Hao Long, Baoping Zhang, Jianping Liu
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Semiconductor lasers
vertical cavity surface emitting lasers
lateral optical confinement.
Online Access:https://ieeexplore.ieee.org/document/9028242/
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spelling doaj-71447ea845a44adebd24cd884f1ab87e2021-03-29T17:57:43ZengIEEEIEEE Photonics Journal1943-06552020-01-011221810.1109/JPHOT.2020.29795649028242Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRsRongbin Xu0https://orcid.org/0000-0003-1041-4293Yang Mei1https://orcid.org/0000-0001-7190-0338Huan Xu2Tianrui Yang3Leiying Ying4Zhiwei Zheng5https://orcid.org/0000-0002-9725-9566Hao Long6https://orcid.org/0000-0002-7057-7214Baoping Zhang7https://orcid.org/0000-0001-9537-5179Jianping Liu8https://orcid.org/0000-0002-1559-7060School of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Laboratory of Micro/Nano-Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, ChinaSuzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, ChinaTwo types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.https://ieeexplore.ieee.org/document/9028242/Semiconductor lasersvertical cavity surface emitting laserslateral optical confinement.
collection DOAJ
language English
format Article
sources DOAJ
author Rongbin Xu
Yang Mei
Huan Xu
Tianrui Yang
Leiying Ying
Zhiwei Zheng
Hao Long
Baoping Zhang
Jianping Liu
spellingShingle Rongbin Xu
Yang Mei
Huan Xu
Tianrui Yang
Leiying Ying
Zhiwei Zheng
Hao Long
Baoping Zhang
Jianping Liu
Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
IEEE Photonics Journal
Semiconductor lasers
vertical cavity surface emitting lasers
lateral optical confinement.
author_facet Rongbin Xu
Yang Mei
Huan Xu
Tianrui Yang
Leiying Ying
Zhiwei Zheng
Hao Long
Baoping Zhang
Jianping Liu
author_sort Rongbin Xu
title Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
title_short Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
title_full Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
title_fullStr Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
title_full_unstemmed Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
title_sort effects of lateral optical confinement in gan vcsels with double dielectric dbrs
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2020-01-01
description Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.
topic Semiconductor lasers
vertical cavity surface emitting lasers
lateral optical confinement.
url https://ieeexplore.ieee.org/document/9028242/
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