Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

• Main Authors: Rongbin Xu, Yang Mei, Huan Xu, Tianrui Yang, Leiying Ying, Zhiwei Zheng, Hao Long, Baoping Zhang, Jianping Liu
• Format: Article
• Language: English
• Published: IEEE 2020-01-01
• Series: IEEE Photonics Journal
• Subjects: Semiconductor lasers; vertical cavity surface emitting lasers; lateral optical confinement.
• Online Access: https://ieeexplore.ieee.org/document/9028242/
• ISSN: 1943-0655

Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.