Growth and Characterization of Ge100-xDyx(x≤2) Nanowires

Growth and Characterization of Ge100-xDyx(x≤2) Nanowires

Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of...

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Main Authors: K. B. Paul, G. I. Athanasopoulos, C. C. Doumanidis, C. Rebholz
Format: Article
Language:English
Published: Hindawi Limited 2010-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2010/107192
id doaj-7132935d814f4a8cad5088b9bb73442c
record_format Article
spelling doaj-7132935d814f4a8cad5088b9bb73442c2020-11-24T23:23:06ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81081687-81242010-01-01201010.1155/2010/107192107192Growth and Characterization of Ge100-xDyx(x≤2) NanowiresK. B. Paul0G. I. Athanasopoulos1C. C. Doumanidis2C. Rebholz3Hephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusHephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusHephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusHephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia, CyprusNovel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nanowires. The nanomaterials are fabricated on gold nucleation seeds on Si/SiO2 substrates. The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range. This nanofabrication method ensures high phase purity and crystallinity of nanowires. Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.http://dx.doi.org/10.1155/2010/107192
collection DOAJ
language English
format Article
sources DOAJ
author K. B. Paul
G. I. Athanasopoulos
C. C. Doumanidis
C. Rebholz
spellingShingle K. B. Paul
G. I. Athanasopoulos
C. C. Doumanidis
C. Rebholz
Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
Advances in Condensed Matter Physics
author_facet K. B. Paul
G. I. Athanasopoulos
C. C. Doumanidis
C. Rebholz
author_sort K. B. Paul
title Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_short Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_full Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_fullStr Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_full_unstemmed Growth and Characterization of Ge100-xDyx(x≤2) Nanowires
title_sort growth and characterization of ge100-xdyx(x≤2) nanowires
publisher Hindawi Limited
series Advances in Condensed Matter Physics
issn 1687-8108
1687-8124
publishDate 2010-01-01
description Novel semiconducting Germanium-Dysprosium nanowires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nanowires. The nanomaterials are fabricated on gold nucleation seeds on Si/SiO2 substrates. The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range. This nanofabrication method ensures high phase purity and crystallinity of nanowires. Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.
url http://dx.doi.org/10.1155/2010/107192
work_keys_str_mv AT kbpaul growthandcharacterizationofge100xdyxx2nanowires
AT giathanasopoulos growthandcharacterizationofge100xdyxx2nanowires
AT ccdoumanidis growthandcharacterizationofge100xdyxx2nanowires
AT crebholz growthandcharacterizationofge100xdyxx2nanowires
_version_ 1725565362302353408

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