High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering

Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and struct...

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Bibliographic Details
Main Authors:	G. Beensh-Marchwicka, L. Król-Stępniewska, A. Misiuk
Format:	Article
Language:	English
Published:	Hindawi Limited 1987-01-01
Series:	Active and Passive Electronic Components
Subjects:	thin films undoped and Sb-doped tin dioxide resistivity structure heat treatment oxygen environment.
Online Access:	http://dx.doi.org/10.1155/1987/49720

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spelling	doaj-712cafcd36b64dc99781249b3589bb212020-11-25T00:37:18ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311987-01-0112319120010.1155/1987/49720High Temperature Oxidized SnO2 Films Prepared by Reactive SputteringG. Beensh-Marchwicka0L. Król-Stępniewska1A. Misiuk2Institute of Electron Technology of Wroclaw, Technical University, Janiszewskiego 11-17, Wroclaw 50-372, PolandInstitute of Electron Technology of Wroclaw, Technical University, Janiszewskiego 11-17, Wroclaw 50-372, PolandHigh Pressure Research Centre, Polish Academy of Sciences, Sokolowska 29, Warsaw 01-142, PolandUndoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.http://dx.doi.org/10.1155/1987/49720thin filmsundoped and Sb-doped tin dioxideresistivitystructureheat treatmentoxygen environment.
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	G. Beensh-Marchwicka L. Król-Stępniewska A. Misiuk
spellingShingle	G. Beensh-Marchwicka L. Król-Stępniewska A. Misiuk High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering Active and Passive Electronic Components thin films undoped and Sb-doped tin dioxide resistivity structure heat treatment oxygen environment.
author_facet	G. Beensh-Marchwicka L. Król-Stępniewska A. Misiuk
author_sort	G. Beensh-Marchwicka
title	High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
title_short	High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
title_full	High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
title_fullStr	High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
title_full_unstemmed	High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
title_sort	high temperature oxidized sno2 films prepared by reactive sputtering
publisher	Hindawi Limited
series	Active and Passive Electronic Components
issn	0882-7516 1563-5031
publishDate	1987-01-01
description	Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.
topic	thin films undoped and Sb-doped tin dioxide resistivity structure heat treatment oxygen environment.
url	http://dx.doi.org/10.1155/1987/49720
work_keys_str_mv	AT gbeenshmarchwicka hightemperatureoxidizedsno2filmspreparedbyreactivesputtering AT lkrolstepniewska hightemperatureoxidizedsno2filmspreparedbyreactivesputtering AT amisiuk hightemperatureoxidizedsno2filmspreparedbyreactivesputtering
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High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering

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