High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering

High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering

Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and struct...

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Bibliographic Details
Main Authors: G. Beensh-Marchwicka, L. Król-Stępniewska, A. Misiuk
Format: Article
Language:English
Published: Hindawi Limited 1987-01-01
Series:Active and Passive Electronic Components
Subjects:
thin films
undoped and Sb-doped tin dioxide
resistivity
structure
heat treatment
oxygen environment.
Online Access:http://dx.doi.org/10.1155/1987/49720
Description
Summary:Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.
ISSN:0882-7516
1563-5031

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