Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

• Main Authors: Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou, Kyamakya Kyandoghere
• Format: Article
• Language: English
• Published: MDPI AG 2020-08-01
• Series: Applied Sciences
• Subjects: single defect; random telegraph noise; Junctionless FinFET; oxide layer; oxide–semiconductor interface
• Online Access: https://www.mdpi.com/2076-3417/10/15/5327
• ISSN: 2076-3417

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect.