Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (R...

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Bibliographic Details
Main Authors: Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou, Kyamakya Kyandoghere
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Applied Sciences
Subjects:
single defect
random telegraph noise
Junctionless FinFET
oxide layer
oxide–semiconductor interface
Online Access:https://www.mdpi.com/2076-3417/10/15/5327

Internet

https://www.mdpi.com/2076-3417/10/15/5327

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