Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires

Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires

This research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates, already covered with native SiO2 developing in d...

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Main Authors: Samatcha Vorathamrong, Somsak Panyakeow, Somchai Ratanathammaphan, Piyasan Praserthdam
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5084344
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spelling doaj-70bf9ae0700d4e5daf562d396af8751c2020-11-24T21:16:04ZengAIP Publishing LLCAIP Advances2158-32262019-02-0192025318025318-610.1063/1.5084344097902ADVSurface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowiresSamatcha Vorathamrong0Somsak Panyakeow1Somchai Ratanathammaphan2Piyasan Praserthdam3Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, ThailandSemiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, ThailandSemiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, ThailandCenter of Excellence on Catalysis and Catalytic Reaction Engineering, Department of Chemical Engineering, Chulalongkorn University, Bangkok 10330, ThailandThis research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates, already covered with native SiO2 developing in different states with identical growth parameters including growth temperature, growth time, and Ga and As flux, using self-assisted VLS process by MBE technique. Results from nanowire samples and substrates were compared to understand the correlation between the changes in appearance of native SiO2 layer and the changes in the growth pattern of the nanowires.http://dx.doi.org/10.1063/1.5084344
collection DOAJ
language English
format Article
sources DOAJ
author Samatcha Vorathamrong
Somsak Panyakeow
Somchai Ratanathammaphan
Piyasan Praserthdam
spellingShingle Samatcha Vorathamrong
Somsak Panyakeow
Somchai Ratanathammaphan
Piyasan Praserthdam
Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
AIP Advances
author_facet Samatcha Vorathamrong
Somsak Panyakeow
Somchai Ratanathammaphan
Piyasan Praserthdam
author_sort Samatcha Vorathamrong
title Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
title_short Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
title_full Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
title_fullStr Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
title_full_unstemmed Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires
title_sort surface evolution of native silicon oxide layer and its effects on the growth of self-assisted vls gaas nanowires
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-02-01
description This research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires. GaAs nanowires growth were grown on Si(111) substrates, already covered with native SiO2 developing in different states with identical growth parameters including growth temperature, growth time, and Ga and As flux, using self-assisted VLS process by MBE technique. Results from nanowire samples and substrates were compared to understand the correlation between the changes in appearance of native SiO2 layer and the changes in the growth pattern of the nanowires.
url http://dx.doi.org/10.1063/1.5084344
work_keys_str_mv AT samatchavorathamrong surfaceevolutionofnativesiliconoxidelayeranditseffectsonthegrowthofselfassistedvlsgaasnanowires
AT somsakpanyakeow surfaceevolutionofnativesiliconoxidelayeranditseffectsonthegrowthofselfassistedvlsgaasnanowires
AT somchairatanathammaphan surfaceevolutionofnativesiliconoxidelayeranditseffectsonthegrowthofselfassistedvlsgaasnanowires
AT piyasanpraserthdam surfaceevolutionofnativesiliconoxidelayeranditseffectsonthegrowthofselfassistedvlsgaasnanowires
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