Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

We performed extremely low-energy 16O+ implantation at 10 keV (Rp ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO2 layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superf...

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Bibliographic Details
Main Authors:	Yasushi Hoshino, Gosuke Yachida, Kodai Inoue, Taiga Toyohara, Jyoji Nakata
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-06-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4954200

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