Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation
We performed extremely low-energy 16O+ implantation at 10 keV (Rp ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO2 layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superf...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-06-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4954200 |