High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

For widespread technological application of nonlinear photonic integrated circuits, ultralow optical losses and high fabrication throughput are required. Here, the authors present a CMOS fabrication technique that realizes integrate photonic microresonators on waver-level with mean quality factors e...

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Main Authors: Junqiu Liu, Guanhao Huang, Rui Ning Wang, Jijun He, Arslan S. Raja, Tianyi Liu, Nils J. Engelsen, Tobias J. Kippenberg
Format: Article
Language:English
Published: Nature Publishing Group 2021-04-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-021-21973-z
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spelling doaj-6fe1bcd7c04b4aeebc420019f947e3452021-04-18T11:14:19ZengNature Publishing GroupNature Communications2041-17232021-04-011211910.1038/s41467-021-21973-zHigh-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuitsJunqiu Liu0Guanhao Huang1Rui Ning Wang2Jijun He3Arslan S. Raja4Tianyi Liu5Nils J. Engelsen6Tobias J. Kippenberg7Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)For widespread technological application of nonlinear photonic integrated circuits, ultralow optical losses and high fabrication throughput are required. Here, the authors present a CMOS fabrication technique that realizes integrate photonic microresonators on waver-level with mean quality factors exceeding 30 million and 1 dB/m optical losses.https://doi.org/10.1038/s41467-021-21973-z
collection DOAJ
language English
format Article
sources DOAJ
author Junqiu Liu
Guanhao Huang
Rui Ning Wang
Jijun He
Arslan S. Raja
Tianyi Liu
Nils J. Engelsen
Tobias J. Kippenberg
spellingShingle Junqiu Liu
Guanhao Huang
Rui Ning Wang
Jijun He
Arslan S. Raja
Tianyi Liu
Nils J. Engelsen
Tobias J. Kippenberg
High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
Nature Communications
author_facet Junqiu Liu
Guanhao Huang
Rui Ning Wang
Jijun He
Arslan S. Raja
Tianyi Liu
Nils J. Engelsen
Tobias J. Kippenberg
author_sort Junqiu Liu
title High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
title_short High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
title_full High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
title_fullStr High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
title_full_unstemmed High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
title_sort high-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2021-04-01
description For widespread technological application of nonlinear photonic integrated circuits, ultralow optical losses and high fabrication throughput are required. Here, the authors present a CMOS fabrication technique that realizes integrate photonic microresonators on waver-level with mean quality factors exceeding 30 million and 1 dB/m optical losses.
url https://doi.org/10.1038/s41467-021-21973-z
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