Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

We investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ) solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitt...

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Main Authors: Erick Omondi Ateto, Makoto Konagai, Shinsuke Miyajima
Format: Article
Language:English
Published: Hindawi Limited 2016-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2016/5282851
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spelling doaj-6fdba9c256264ad6b07876f019bd9baa2020-11-25T00:49:06ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/52828515282851Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter LayerErick Omondi Ateto0Makoto Konagai1Shinsuke Miyajima2Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-17 O-okayama, Meguro-ku, Tokyo 152-8552, JapanResearch Centre for Silicon Nano-Science, Tokyo City University, 8-9-18, Todoroki, Setagaya, Tokyo 158-8586, JapanDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-17 O-okayama, Meguro-ku, Tokyo 152-8552, JapanWe investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ) solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO) and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H) exhibit a short circuit current density (Jsc) of 38.65 mA/cm2 and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.http://dx.doi.org/10.1155/2016/5282851
collection DOAJ
language English
format Article
sources DOAJ
author Erick Omondi Ateto
Makoto Konagai
Shinsuke Miyajima
spellingShingle Erick Omondi Ateto
Makoto Konagai
Shinsuke Miyajima
Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
International Journal of Photoenergy
author_facet Erick Omondi Ateto
Makoto Konagai
Shinsuke Miyajima
author_sort Erick Omondi Ateto
title Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
title_short Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
title_full Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
title_fullStr Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
title_full_unstemmed Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer
title_sort triple layer antireflection design concept for the front side of c-si heterojunction solar cell based on the antireflective effect of nc-3c-sic:h emitter layer
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2016-01-01
description We investigated the antireflective (AR) effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ) solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO) and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H) exhibit a short circuit current density (Jsc) of 38.65 mA/cm2 and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.
url http://dx.doi.org/10.1155/2016/5282851
work_keys_str_mv AT erickomondiateto triplelayerantireflectiondesignconceptforthefrontsideofcsiheterojunctionsolarcellbasedontheantireflectiveeffectofnc3csichemitterlayer
AT makotokonagai triplelayerantireflectiondesignconceptforthefrontsideofcsiheterojunctionsolarcellbasedontheantireflectiveeffectofnc3csichemitterlayer
AT shinsukemiyajima triplelayerantireflectiondesignconceptforthefrontsideofcsiheterojunctionsolarcellbasedontheantireflectiveeffectofnc3csichemitterlayer
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