Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors

Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors

The concept of ionicity has been developed by Phillips and Van Vechten from the dielectric analysis of the semiconductors and insulators to evaluate various bond parameters of binary tetrahedral (AIIBVI and AIIIBV) semiconductors. In this paper, an advance hypothesis of average atomic number of the...

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Main Authors: Ajay Singh Verma, Rajesh C. Gupta, Khushvant Singh
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2021-02-01
Series:East European Journal of Physics
Subjects:
ionicity
atomic number
zinc blende
energy gap
Online Access:https://periodicals.karazin.ua/eejp/article/view/16351
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spelling doaj-6f64043a853945deadcbb3229431cd822021-03-23T13:41:16ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392021-02-011899210.26565/2312-4334-2021-1-1116351Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral SemiconductorsAjay Singh Verma0Rajesh C. Gupta1Khushvant Singh2Department of Natural and Applied Sciences, School of Technology, Glocal University, Saharanpur, IndiaDepartment of Physics, B. S. A. College, Mathura, IndiaDepartment of Physics, B. S. A. College, Mathura, IndiaThe concept of ionicity has been developed by Phillips and Van Vechten from the dielectric analysis of the semiconductors and insulators to evaluate various bond parameters of binary tetrahedral (AIIBVI and AIIIBV) semiconductors. In this paper, an advance hypothesis of average atomic number of the elements in a compound has been used to evaluate intrinsic electronic and optical parameters such as ionic gap (Ec), average energy gap (Eg), crystal ionicity (fi) and dielectric constant (ϵ) of binary tetrahedral semiconductors.https://periodicals.karazin.ua/eejp/article/view/16351ionicityatomic numberzinc blendeenergy gap
collection DOAJ
language English
format Article
sources DOAJ
author Ajay Singh Verma
Rajesh C. Gupta
Khushvant Singh
spellingShingle Ajay Singh Verma
Rajesh C. Gupta
Khushvant Singh
Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors
East European Journal of Physics
ionicity
atomic number
zinc blende
energy gap
author_facet Ajay Singh Verma
Rajesh C. Gupta
Khushvant Singh
author_sort Ajay Singh Verma
title Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors
title_short Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors
title_full Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors
title_fullStr Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors
title_full_unstemmed Empirical Relation for Electronic and Optical Properties of Binary Tetrahedral Semiconductors
title_sort empirical relation for electronic and optical properties of binary tetrahedral semiconductors
publisher V.N. Karazin Kharkiv National University Publishing
series East European Journal of Physics
issn 2312-4334
2312-4539
publishDate 2021-02-01
description The concept of ionicity has been developed by Phillips and Van Vechten from the dielectric analysis of the semiconductors and insulators to evaluate various bond parameters of binary tetrahedral (AIIBVI and AIIIBV) semiconductors. In this paper, an advance hypothesis of average atomic number of the elements in a compound has been used to evaluate intrinsic electronic and optical parameters such as ionic gap (Ec), average energy gap (Eg), crystal ionicity (fi) and dielectric constant (ϵ) of binary tetrahedral semiconductors.
topic ionicity
atomic number
zinc blende
energy gap
url https://periodicals.karazin.ua/eejp/article/view/16351
work_keys_str_mv AT ajaysinghverma empiricalrelationforelectronicandopticalpropertiesofbinarytetrahedralsemiconductors
AT rajeshcgupta empiricalrelationforelectronicandopticalpropertiesofbinarytetrahedralsemiconductors
AT khushvantsingh empiricalrelationforelectronicandopticalpropertiesofbinarytetrahedralsemiconductors
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