Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor

An electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which als...

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Main Authors: Robert E. Peale, Evan Smith, Christian W. Smith, Farnood Khalilzadeh-Rezaie, Masa Ishigami, Nima Nader, Shiva Vangala, Justin W. Cleary
Format: Article
Language:English
Published: AIP Publishing LLC 2016-09-01
Series:APL Photonics
Online Access:http://dx.doi.org/10.1063/1.4962428
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spelling doaj-6f1cb3bbee764a7db79aabb654ecca282020-11-25T00:40:28ZengAIP Publishing LLCAPL Photonics2378-09672016-09-0116066103066103-810.1063/1.4962428005606APPElectronic detection of surface plasmon polaritons by metal-oxide-silicon capacitorRobert E. Peale0Evan Smith1Christian W. Smith2Farnood Khalilzadeh-Rezaie3Masa Ishigami4Nima Nader5Shiva Vangala6Justin W. Cleary7Department of Physics, University of Central Florida, Orlando, Florida 32816, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USAAn electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors.http://dx.doi.org/10.1063/1.4962428
collection DOAJ
language English
format Article
sources DOAJ
author Robert E. Peale
Evan Smith
Christian W. Smith
Farnood Khalilzadeh-Rezaie
Masa Ishigami
Nima Nader
Shiva Vangala
Justin W. Cleary
spellingShingle Robert E. Peale
Evan Smith
Christian W. Smith
Farnood Khalilzadeh-Rezaie
Masa Ishigami
Nima Nader
Shiva Vangala
Justin W. Cleary
Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
APL Photonics
author_facet Robert E. Peale
Evan Smith
Christian W. Smith
Farnood Khalilzadeh-Rezaie
Masa Ishigami
Nima Nader
Shiva Vangala
Justin W. Cleary
author_sort Robert E. Peale
title Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
title_short Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
title_full Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
title_fullStr Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
title_full_unstemmed Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
title_sort electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
publisher AIP Publishing LLC
series APL Photonics
issn 2378-0967
publishDate 2016-09-01
description An electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors.
url http://dx.doi.org/10.1063/1.4962428
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