Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor
An electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which als...
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Online Access: | http://dx.doi.org/10.1063/1.4962428 |
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doaj-6f1cb3bbee764a7db79aabb654ecca282020-11-25T00:40:28ZengAIP Publishing LLCAPL Photonics2378-09672016-09-0116066103066103-810.1063/1.4962428005606APPElectronic detection of surface plasmon polaritons by metal-oxide-silicon capacitorRobert E. Peale0Evan Smith1Christian W. Smith2Farnood Khalilzadeh-Rezaie3Masa Ishigami4Nima Nader5Shiva Vangala6Justin W. Cleary7Department of Physics, University of Central Florida, Orlando, Florida 32816, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Ohio 45433, USAAn electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors.http://dx.doi.org/10.1063/1.4962428 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Robert E. Peale Evan Smith Christian W. Smith Farnood Khalilzadeh-Rezaie Masa Ishigami Nima Nader Shiva Vangala Justin W. Cleary |
spellingShingle |
Robert E. Peale Evan Smith Christian W. Smith Farnood Khalilzadeh-Rezaie Masa Ishigami Nima Nader Shiva Vangala Justin W. Cleary Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor APL Photonics |
author_facet |
Robert E. Peale Evan Smith Christian W. Smith Farnood Khalilzadeh-Rezaie Masa Ishigami Nima Nader Shiva Vangala Justin W. Cleary |
author_sort |
Robert E. Peale |
title |
Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor |
title_short |
Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor |
title_full |
Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor |
title_fullStr |
Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor |
title_full_unstemmed |
Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor |
title_sort |
electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor |
publisher |
AIP Publishing LLC |
series |
APL Photonics |
issn |
2378-0967 |
publishDate |
2016-09-01 |
description |
An electronic detector of surface plasmon polaritons (SPPs) is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS) capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors. |
url |
http://dx.doi.org/10.1063/1.4962428 |
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