Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation
We investigated the sensing characteristics of NO<sub>2</sub> gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of t...
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MDPI AG
2021-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/4/400 |
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doaj-6e0b0e2c4b7a4ec29f84a99afa5f211f2021-04-05T23:00:58ZengMDPI AGMicromachines2072-666X2021-04-011240040010.3390/mi12040400Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias ModulationVan Cuong Nguyen0Kwangeun Kim1Hyungtak Kim2School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, KoreaSchool of Electronics and Information Engineering, Korea Aerospace University, Gyeonggi 10540, KoreaSchool of Electronic and Electrical Engineering, Hongik University, Seoul 04066, KoreaWe investigated the sensing characteristics of NO<sub>2</sub> gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at <i>V</i><sub>G</sub> = 0 V and <i>V</i><sub>G</sub> = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.https://www.mdpi.com/2072-666X/12/4/400gate bias modulationpalladium catalystgallium nitridenitrogen dioxide gas sensorhigh electron mobility transistor |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Van Cuong Nguyen Kwangeun Kim Hyungtak Kim |
| spellingShingle |
Van Cuong Nguyen Kwangeun Kim Hyungtak Kim Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation Micromachines gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor high electron mobility transistor |
| author_facet |
Van Cuong Nguyen Kwangeun Kim Hyungtak Kim |
| author_sort |
Van Cuong Nguyen |
| title |
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation |
| title_short |
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation |
| title_full |
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation |
| title_fullStr |
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation |
| title_full_unstemmed |
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation |
| title_sort |
performance optimization of nitrogen dioxide gas sensor based on pd-algan/gan hemts by gate bias modulation |
| publisher |
MDPI AG |
| series |
Micromachines |
| issn |
2072-666X |
| publishDate |
2021-04-01 |
| description |
We investigated the sensing characteristics of NO<sub>2</sub> gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at <i>V</i><sub>G</sub> = 0 V and <i>V</i><sub>G</sub> = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature. |
| topic |
gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor high electron mobility transistor |
| url |
https://www.mdpi.com/2072-666X/12/4/400 |
| work_keys_str_mv |
AT vancuongnguyen performanceoptimizationofnitrogendioxidegassensorbasedonpdalganganhemtsbygatebiasmodulation AT kwangeunkim performanceoptimizationofnitrogendioxidegassensorbasedonpdalganganhemtsbygatebiasmodulation AT hyungtakkim performanceoptimizationofnitrogendioxidegassensorbasedonpdalganganhemtsbygatebiasmodulation |
| _version_ |
1721538789830033408 |