Highly Efficient HBT Power Amplifier Using High-Q Single- and Two-Winding Transformer With IMD3 Cancellation

This paper presents a highly efficient InGaP/GaAs HBT power amplifier (PA) implemented using a proposed high-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> single- and two-winding transformer. A single- and two-winding transformer is de...

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Bibliographic Details
Main Authors: Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
PCB
Online Access:https://ieeexplore.ieee.org/document/9450832/