Low temperature electroformation of TaOx-based resistive switching devices

Low temperature electroformation of TaOx-based resistive switching devices

Transport characteristics of TiN/Ta/TaOx/TiN resistive-switching crossbar devices with amorphous TaOx functional layer have been investigated at cryogenic temperatures. Quasi-DC I-V characteristics at 10 K show a negative differential resistance region followed by a rapid transition to the non-volat...

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Bibliographic Details
Main Authors:	Darshil K. Gala, Abhishek A. Sharma, Dasheng Li, Jonathan M. Goodwill, James A. Bain, Marek Skowronski
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-01-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.4939181

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