Low temperature electroformation of TaOx-based resistive switching devices
Transport characteristics of TiN/Ta/TaOx/TiN resistive-switching crossbar devices with amorphous TaOx functional layer have been investigated at cryogenic temperatures. Quasi-DC I-V characteristics at 10 K show a negative differential resistance region followed by a rapid transition to the non-volat...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4939181 |