Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves

The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton s...

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Main Authors: S. Lazić, E. Chernysheva, Ž. Gačević, H. P. van der Meulen, E. Calleja, J. M. Calleja Pardo
Format: Article
Language:English
Published: AIP Publishing LLC 2015-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4932147
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spelling doaj-6d4a809cd268465890e487ee443f8b6a2020-11-25T01:41:15ZengAIP Publishing LLCAIP Advances2158-32262015-09-0159097217097217-710.1063/1.4932147097509ADVDynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic wavesS. Lazić0E. Chernysheva1Ž. Gačević2H. P. van der Meulen3E. Calleja4J. M. Calleja Pardo5Departamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, SpainDepartamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, SpainISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid, SpainDepartamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, SpainISOM-DIE, Universidad Politécnica de Madrid, 28040 Madrid, SpainDepartamento de Física de Materiales, Instituto “Nicolás Cabrera” and Instituto de Física de Materia Condensada (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, SpainThe optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.http://dx.doi.org/10.1063/1.4932147
collection DOAJ
language English
format Article
sources DOAJ
author S. Lazić
E. Chernysheva
Ž. Gačević
H. P. van der Meulen
E. Calleja
J. M. Calleja Pardo
spellingShingle S. Lazić
E. Chernysheva
Ž. Gačević
H. P. van der Meulen
E. Calleja
J. M. Calleja Pardo
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
AIP Advances
author_facet S. Lazić
E. Chernysheva
Ž. Gačević
H. P. van der Meulen
E. Calleja
J. M. Calleja Pardo
author_sort S. Lazić
title Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
title_short Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
title_full Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
title_fullStr Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
title_full_unstemmed Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
title_sort dynamic control of the optical emission from gan/ingan nanowire quantum dots by surface acoustic waves
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-09-01
description The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.
url http://dx.doi.org/10.1063/1.4932147
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AT hpvandermeulen dynamiccontroloftheopticalemissionfromganingannanowirequantumdotsbysurfaceacousticwaves
AT ecalleja dynamiccontroloftheopticalemissionfromganingannanowirequantumdotsbysurfaceacousticwaves
AT jmcallejapardo dynamiccontroloftheopticalemissionfromganingannanowirequantumdotsbysurfaceacousticwaves
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