Characterization of electroforming-free titanium dioxide memristors

Characterization of electroforming-free titanium dioxide memristors

Metal–insulator–metal (MIM) structures based on titanium dioxide have demonstrated reversible and non-volatile resistance-switching behavior and have been identified with the concept of the memristor. Microphysical studies suggest that the development of sub-oxide phases in the material drives the r...

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Bibliographic Details
Main Authors: John Paul Strachan, J. Joshua Yang, L. A. Montoro, C. A. Ospina, A. J. Ramirez, A. L. D. Kilcoyne, Gilberto Medeiros-Ribeiro, R. Stanley Williams
Format: Article
Language:English
Published: Beilstein-Institut 2013-08-01
Series:Beilstein Journal of Nanotechnology
Subjects:
electron microscopy
memristor
resistance switching
transition-metal oxide
X-ray spectroscopy
Online Access:https://doi.org/10.3762/bjnano.4.55

Internet

https://doi.org/10.3762/bjnano.4.55

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