Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures

The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hydrogen responses of output voltages V of the MISFET-b...

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Bibliographic Details
Main Authors: Boris Podlepetsky, Andrew Kovalenko, Marina Nikiforova
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Proceedings
Subjects:
Online Access:https://www.mdpi.com/2504-3900/1/4/446

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