Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures
The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hydrogen responses of output voltages V of the MISFET-b...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-08-01
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| Series: | Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2504-3900/1/4/446 |