Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures

• Main Authors: Boris Podlepetsky, Andrew Kovalenko, Marina Nikiforova
• Format: Article
• Language: English
• Published: MDPI AG 2017-08-01
• Series: Proceedings
• Subjects: hydrogen sensors; MISFET; radiation sensitivity; electric modes
• Online Access: https://www.mdpi.com/2504-3900/1/4/446

The influence of the circuit’s electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hydrogen responses of output voltages V of the MISFET-based circuits at different gate voltages before and after the electron irradiations. The voltages V as functions of hydrogen concentration C were determined for different ionizing doses D. Models of influence of the electric modes on the radiation sensitivity of sensors were based on experimental dependencies of V(C, D). The recommendations for the optimal choice of MISFET-based circuit’s electric modes were formulated.