Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide...

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Bibliographic Details
Main Authors:	Xue Zhang, Hyeonju Lee, Jungwon Kim, Eui-Jik Kim, Jaehoon Park
Format:	Article
Language:	English
Published:	MDPI AG 2017-12-01
Series:	Materials
Subjects:	oxide semiconductor sol-gel precursor gallium tin transistor
Online Access:	https://www.mdpi.com/1996-1944/11/1/46

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