The structural characterisation of HWCVD-deposited nanocrystalline silicon films

Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalli...

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Main Author: Bibhu Swain
Format: Article
Language:English
Published: Academy of Science of South Africa 2009-12-01
Series:South African Journal of Science
Online Access:http://192.168.0.115/index.php/sajs/article/view/10068
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spelling doaj-6cb6e35fff314522ae3a4430ea219ff52021-04-03T15:48:17ZengAcademy of Science of South AfricaSouth African Journal of Science1996-74892009-12-011051/2The structural characterisation of HWCVD-deposited nanocrystalline silicon filmsBibhu Swain0Department of Physics, University of Cape Town, Private Bag, Rondebosch 7701, South Africa. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai, India.Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30 - 50% and the nc-Si crystallite size was in the range 20 - 35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.http://192.168.0.115/index.php/sajs/article/view/10068
collection DOAJ
language English
format Article
sources DOAJ
author Bibhu Swain
spellingShingle Bibhu Swain
The structural characterisation of HWCVD-deposited nanocrystalline silicon films
South African Journal of Science
author_facet Bibhu Swain
author_sort Bibhu Swain
title The structural characterisation of HWCVD-deposited nanocrystalline silicon films
title_short The structural characterisation of HWCVD-deposited nanocrystalline silicon films
title_full The structural characterisation of HWCVD-deposited nanocrystalline silicon films
title_fullStr The structural characterisation of HWCVD-deposited nanocrystalline silicon films
title_full_unstemmed The structural characterisation of HWCVD-deposited nanocrystalline silicon films
title_sort structural characterisation of hwcvd-deposited nanocrystalline silicon films
publisher Academy of Science of South Africa
series South African Journal of Science
issn 1996-7489
publishDate 2009-12-01
description Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30 - 50% and the nc-Si crystallite size was in the range 20 - 35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.
url http://192.168.0.115/index.php/sajs/article/view/10068
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