The structural characterisation of HWCVD-deposited nanocrystalline silicon films
Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalli...
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doaj-6cb6e35fff314522ae3a4430ea219ff52021-04-03T15:48:17ZengAcademy of Science of South AfricaSouth African Journal of Science1996-74892009-12-011051/2The structural characterisation of HWCVD-deposited nanocrystalline silicon filmsBibhu Swain0Department of Physics, University of Cape Town, Private Bag, Rondebosch 7701, South Africa. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai, India.Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30 - 50% and the nc-Si crystallite size was in the range 20 - 35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.http://192.168.0.115/index.php/sajs/article/view/10068 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Bibhu Swain |
spellingShingle |
Bibhu Swain The structural characterisation of HWCVD-deposited nanocrystalline silicon films South African Journal of Science |
author_facet |
Bibhu Swain |
author_sort |
Bibhu Swain |
title |
The structural characterisation of HWCVD-deposited nanocrystalline silicon films |
title_short |
The structural characterisation of HWCVD-deposited nanocrystalline silicon films |
title_full |
The structural characterisation of HWCVD-deposited nanocrystalline silicon films |
title_fullStr |
The structural characterisation of HWCVD-deposited nanocrystalline silicon films |
title_full_unstemmed |
The structural characterisation of HWCVD-deposited nanocrystalline silicon films |
title_sort |
structural characterisation of hwcvd-deposited nanocrystalline silicon films |
publisher |
Academy of Science of South Africa |
series |
South African Journal of Science |
issn |
1996-7489 |
publishDate |
2009-12-01 |
description |
Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30 - 50% and the nc-Si crystallite size was in the range 20 - 35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm. |
url |
http://192.168.0.115/index.php/sajs/article/view/10068 |
work_keys_str_mv |
AT bibhuswain thestructuralcharacterisationofhwcvddepositednanocrystallinesiliconfilms AT bibhuswain structuralcharacterisationofhwcvddepositednanocrystallinesiliconfilms |
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1721543823116468224 |