Integrated SiGe Detectors for Si Photonic Sensor Platforms

Integrated SiGe Detectors for Si Photonic Sensor Platforms

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...

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Bibliographic Details
Main Authors: Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Proceedings
Subjects:
Si photonics
SiGe detectors
optical coherence tomography
Online Access:https://www.mdpi.com/2504-3900/1/4/559
Description
Summary:In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
ISSN:2504-3900

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