Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion
It is of great significance to regulate the dielectric parameters and microstructure of carbon materials by elemental doping in pursuing microwave absorption (MA) materials of high performance. In this work, the surface electronic structure of N-doped CNTs was tuned by boron doping, in which the MA...
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MDPI AG
2021-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/5/1164 |
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doaj-6c61892d5ed643c5a7c402d87a254e2a2021-04-29T23:04:41ZengMDPI AGNanomaterials2079-49912021-04-01111164116410.3390/nano11051164Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron InsertionQingya Sun0Xinfang Zhang1Ruonan Liu2Shaofeng Shen3Fan Wu4Aming Xie5School of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, ChinaSchool of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, ChinaSchool of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, ChinaSchool of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, ChinaSchool of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, ChinaSchool of Mechanical Engineering, Nanjing University of Science & Technology, Nanjing 210094, ChinaIt is of great significance to regulate the dielectric parameters and microstructure of carbon materials by elemental doping in pursuing microwave absorption (MA) materials of high performance. In this work, the surface electronic structure of N-doped CNTs was tuned by boron doping, in which the MA performance of CNTs was improved under the synergistic action of B and N atoms. The B,N-doped carbon nanotubes (B,N-CNTs) exhibited excellent MA performance, where the value of minimum reflection loss was −40.04 dB, and the efficient absorption bandwidth reached 4.9 GHz (10.5–15.4 GHz). Appropriate conductance loss and multi-polarization loss provide the main contribution to the MA of B,N-CNTs. This study provides a novel method for the design of CNTs related MA materials.https://www.mdpi.com/2079-4991/11/5/1164microwave absorptionboron dopingreflection losseffective absorption bandwidth |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Qingya Sun Xinfang Zhang Ruonan Liu Shaofeng Shen Fan Wu Aming Xie |
| spellingShingle |
Qingya Sun Xinfang Zhang Ruonan Liu Shaofeng Shen Fan Wu Aming Xie Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion Nanomaterials microwave absorption boron doping reflection loss effective absorption bandwidth |
| author_facet |
Qingya Sun Xinfang Zhang Ruonan Liu Shaofeng Shen Fan Wu Aming Xie |
| author_sort |
Qingya Sun |
| title |
Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion |
| title_short |
Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion |
| title_full |
Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion |
| title_fullStr |
Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion |
| title_full_unstemmed |
Tuning the Dielectric and Microwaves Absorption Properties of N-Doped Carbon Nanotubes by Boron Insertion |
| title_sort |
tuning the dielectric and microwaves absorption properties of n-doped carbon nanotubes by boron insertion |
| publisher |
MDPI AG |
| series |
Nanomaterials |
| issn |
2079-4991 |
| publishDate |
2021-04-01 |
| description |
It is of great significance to regulate the dielectric parameters and microstructure of carbon materials by elemental doping in pursuing microwave absorption (MA) materials of high performance. In this work, the surface electronic structure of N-doped CNTs was tuned by boron doping, in which the MA performance of CNTs was improved under the synergistic action of B and N atoms. The B,N-doped carbon nanotubes (B,N-CNTs) exhibited excellent MA performance, where the value of minimum reflection loss was −40.04 dB, and the efficient absorption bandwidth reached 4.9 GHz (10.5–15.4 GHz). Appropriate conductance loss and multi-polarization loss provide the main contribution to the MA of B,N-CNTs. This study provides a novel method for the design of CNTs related MA materials. |
| topic |
microwave absorption boron doping reflection loss effective absorption bandwidth |
| url |
https://www.mdpi.com/2079-4991/11/5/1164 |
| work_keys_str_mv |
AT qingyasun tuningthedielectricandmicrowavesabsorptionpropertiesofndopedcarbonnanotubesbyboroninsertion AT xinfangzhang tuningthedielectricandmicrowavesabsorptionpropertiesofndopedcarbonnanotubesbyboroninsertion AT ruonanliu tuningthedielectricandmicrowavesabsorptionpropertiesofndopedcarbonnanotubesbyboroninsertion AT shaofengshen tuningthedielectricandmicrowavesabsorptionpropertiesofndopedcarbonnanotubesbyboroninsertion AT fanwu tuningthedielectricandmicrowavesabsorptionpropertiesofndopedcarbonnanotubesbyboroninsertion AT amingxie tuningthedielectricandmicrowavesabsorptionpropertiesofndopedcarbonnanotubesbyboroninsertion |
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1721500086924476416 |