Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Abstract Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the “coffee-...

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Main Authors: Kun Liang, Dingwei Li, Huihui Ren, Momo Zhao, Hong Wang, Mengfan Ding, Guangwei Xu, Xiaolong Zhao, Shibing Long, Siyuan Zhu, Pei Sheng, Wenbin Li, Xiao Lin, Bowen Zhu
Format: Article
Language:English
Published: SpringerOpen 2021-08-01
Series:Nano-Micro Letters
Subjects:
Online Access:https://doi.org/10.1007/s40820-021-00694-4
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spelling doaj-6c224d517935484b8e66c94772ae530a2021-08-08T11:05:25ZengSpringerOpenNano-Micro Letters2311-67062150-55512021-08-0113111110.1007/s40820-021-00694-4Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring EffectKun Liang0Dingwei Li1Huihui Ren2Momo Zhao3Hong Wang4Mengfan Ding5Guangwei Xu6Xiaolong Zhao7Shibing Long8Siyuan Zhu9Pei Sheng10Wenbin Li11Xiao Lin12Bowen Zhu13Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake UniversityKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake UniversityKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake UniversityKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake UniversityKey Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversitySchool of Microelectronics, University of Science and Technology of ChinaSchool of Microelectronics, University of Science and Technology of ChinaSchool of Microelectronics, University of Science and Technology of ChinaSchool of Microelectronics, University of Science and Technology of ChinaInstrumentation and Service Center for Physical Sciences, Westlake UniversityInstrumentation and Service Center for Physical Sciences, Westlake UniversityKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake UniversitySchool of Science, Westlake UniversityKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake UniversityAbstract Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the “coffee-ring” effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect. ITO has high electrical conductivity and is generally used as an electrode material. However, by reducing the film thickness down to nanometers scale, the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors. The ultrathin (~10-nm-thick) ITO film in the center of the coffee-ring worked as semiconducting channels, while the thick ITO ridges (>18-nm-thick) served as the contact electrodes. The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V−1 s−1 and a low subthreshold swing of 105 mV dec−1. In addition, the devices exhibited excellent electrical stability under positive bias illumination stress (PBIS, ΔV th = 0.31 V) and negative bias illuminaiton stress (NBIS, ΔV th = −0.29 V) after 10,000 s voltage bias tests. More remarkably, fully printed n-type metal–oxide–semiconductor (NMOS) inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V, promising for advanced electronics applications.https://doi.org/10.1007/s40820-021-00694-4Printed electronicsIndium tin oxideThin-film transistorsCoffee-ring effectNMOS inverters
collection DOAJ
language English
format Article
sources DOAJ
author Kun Liang
Dingwei Li
Huihui Ren
Momo Zhao
Hong Wang
Mengfan Ding
Guangwei Xu
Xiaolong Zhao
Shibing Long
Siyuan Zhu
Pei Sheng
Wenbin Li
Xiao Lin
Bowen Zhu
spellingShingle Kun Liang
Dingwei Li
Huihui Ren
Momo Zhao
Hong Wang
Mengfan Ding
Guangwei Xu
Xiaolong Zhao
Shibing Long
Siyuan Zhu
Pei Sheng
Wenbin Li
Xiao Lin
Bowen Zhu
Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
Nano-Micro Letters
Printed electronics
Indium tin oxide
Thin-film transistors
Coffee-ring effect
NMOS inverters
author_facet Kun Liang
Dingwei Li
Huihui Ren
Momo Zhao
Hong Wang
Mengfan Ding
Guangwei Xu
Xiaolong Zhao
Shibing Long
Siyuan Zhu
Pei Sheng
Wenbin Li
Xiao Lin
Bowen Zhu
author_sort Kun Liang
title Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
title_short Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
title_full Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
title_fullStr Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
title_full_unstemmed Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect
title_sort fully printed high-performance n-type metal oxide thin-film transistors utilizing coffee-ring effect
publisher SpringerOpen
series Nano-Micro Letters
issn 2311-6706
2150-5551
publishDate 2021-08-01
description Abstract Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the “coffee-ring” effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect. ITO has high electrical conductivity and is generally used as an electrode material. However, by reducing the film thickness down to nanometers scale, the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors. The ultrathin (~10-nm-thick) ITO film in the center of the coffee-ring worked as semiconducting channels, while the thick ITO ridges (>18-nm-thick) served as the contact electrodes. The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V−1 s−1 and a low subthreshold swing of 105 mV dec−1. In addition, the devices exhibited excellent electrical stability under positive bias illumination stress (PBIS, ΔV th = 0.31 V) and negative bias illuminaiton stress (NBIS, ΔV th = −0.29 V) after 10,000 s voltage bias tests. More remarkably, fully printed n-type metal–oxide–semiconductor (NMOS) inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V, promising for advanced electronics applications.
topic Printed electronics
Indium tin oxide
Thin-film transistors
Coffee-ring effect
NMOS inverters
url https://doi.org/10.1007/s40820-021-00694-4
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