Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method

Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method

As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the tempera...

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Main Authors: Xia Tang, Botao Liu, Yue Yu, Botao Song, Pengfei Han, Sheng Liu, Bing Gao
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Crystals
Subjects:
computer simulation
radiation
bulk β-Ga<sub>2</sub>O<sub>3</sub> growth
Online Access:https://www.mdpi.com/2073-4352/11/7/763
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spelling doaj-6bcf597895bc48028389d0d49719fa032021-07-23T13:36:33ZengMDPI AGCrystals2073-43522021-06-011176376310.3390/cryst11070763Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski MethodXia Tang0Botao Liu1Yue Yu2Botao Song3Pengfei Han4Sheng Liu5Bing Gao6The Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, ChinaAs a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga<sub>2</sub>O<sub>3</sub> single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two cases of internal radiation and no internal radiation were compared to study the effect of radiation on the process parameters. The temperature distribution of the furnace, the temperature field, and the flow field of the melt was calculated. The temperature, the temperature gradient of the crystal, the temperature at the bottom of the crucible, and the heater power were studied for the crystals grown in the two cases of radiation. The results obtained in this study clearly show that the loss calculated by including the internal radiation is higher compared to that including the surface radiation.https://www.mdpi.com/2073-4352/11/7/763computer simulationradiationbulk β-Ga<sub>2</sub>O<sub>3</sub> growth
collection DOAJ
language English
format Article
sources DOAJ
author Xia Tang
Botao Liu
Yue Yu
Botao Song
Pengfei Han
Sheng Liu
Bing Gao
spellingShingle Xia Tang
Botao Liu
Yue Yu
Botao Song
Pengfei Han
Sheng Liu
Bing Gao
Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method
Crystals
computer simulation
radiation
bulk β-Ga<sub>2</sub>O<sub>3</sub> growth
author_facet Xia Tang
Botao Liu
Yue Yu
Botao Song
Pengfei Han
Sheng Liu
Bing Gao
author_sort Xia Tang
title Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method
title_short Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method
title_full Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method
title_fullStr Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method
title_full_unstemmed Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals with the Czochralski Method
title_sort effect of internal radiation on process parameters in the global simulation of growing large-size bulk β-ga<sub>2</sub>o<sub>3</sub> single crystals with the czochralski method
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2021-06-01
description As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga<sub>2</sub>O<sub>3</sub> single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two cases of internal radiation and no internal radiation were compared to study the effect of radiation on the process parameters. The temperature distribution of the furnace, the temperature field, and the flow field of the melt was calculated. The temperature, the temperature gradient of the crystal, the temperature at the bottom of the crucible, and the heater power were studied for the crystals grown in the two cases of radiation. The results obtained in this study clearly show that the loss calculated by including the internal radiation is higher compared to that including the surface radiation.
topic computer simulation
radiation
bulk β-Ga<sub>2</sub>O<sub>3</sub> growth
url https://www.mdpi.com/2073-4352/11/7/763
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AT botaoliu effectofinternalradiationonprocessparametersintheglobalsimulationofgrowinglargesizebulkbgasub2subosub3subsinglecrystalswiththeczochralskimethod
AT yueyu effectofinternalradiationonprocessparametersintheglobalsimulationofgrowinglargesizebulkbgasub2subosub3subsinglecrystalswiththeczochralskimethod
AT botaosong effectofinternalradiationonprocessparametersintheglobalsimulationofgrowinglargesizebulkbgasub2subosub3subsinglecrystalswiththeczochralskimethod
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AT binggao effectofinternalradiationonprocessparametersintheglobalsimulationofgrowinglargesizebulkbgasub2subosub3subsinglecrystalswiththeczochralskimethod
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