Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs
We postulate that in ultra-scaled Field Effect Transistors (FET), such as nanowires in sub7nm technology, the source contact will act as an energy filter and increase the effective temperature of carriers arriving at the channel barrier. This is due to the absence of inelastic scattering in the shor...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9037359/ |