Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials

Abstract Seeking carbon phases with versatile properties is one of the fundamental goals in physics, chemistry, and materials science. Here, based on the first-principles calculations, a family of three-dimensional (3D) graphene networks with abundant and fabulous electronic properties, including ra...

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Main Authors: Yan Gao, Chengyong Zhong, Shengyuan A. Yang, Kai Liu, Zhong-Yi Lu
Format: Article
Language:English
Published: Nature Publishing Group 2021-07-01
Series:npj Computational Materials
Online Access:https://doi.org/10.1038/s41524-021-00579-5
id doaj-6bb5b9afc0a248bc8c977372db60fa67
record_format Article
spelling doaj-6bb5b9afc0a248bc8c977372db60fa672021-07-18T11:16:57ZengNature Publishing Groupnpj Computational Materials2057-39602021-07-01711710.1038/s41524-021-00579-5Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materialsYan Gao0Chengyong Zhong1Shengyuan A. Yang2Kai Liu3Zhong-Yi Lu4Department of physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of ChinaInstitute for Advanced Study, Chengdu UniversityResearch Laboratory for Quantum Materials, Singapore University of Technology and DesignDepartment of physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of ChinaDepartment of physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of ChinaAbstract Seeking carbon phases with versatile properties is one of the fundamental goals in physics, chemistry, and materials science. Here, based on the first-principles calculations, a family of three-dimensional (3D) graphene networks with abundant and fabulous electronic properties, including rarely reported dipole-allowed truly direct band gap semiconductors with suitable band gaps (1.07–1.87 eV) as optoelectronic/photovoltaic materials and topological nodal-ring semimetals, are proposed through stitching different graphene layers with acetylenic linkages. Remarkably, the optical absorption coefficients in some of those semiconducting carbon allotropes express possibly the highest performance among all of the semiconducting carbon phases known to date. On the other hand, the topological states in those topological nodal-ring semimetals are protected by the time-reversal and spatial symmetry and present nodal rings and nodal helical loops topological patterns. Those newly revealed carbon phases possess low formation energies and excellent thermodynamic stabilities; thus, they not only host a great potential in the application of optoelectronics, photovoltaics, and quantum topological materials etc., but also can be utilized as catalysis, molecule sieves or Li-ion anode materials and so on. Moreover, the approach used here to design novel carbon allotropes may also give more enlightenments to create various carbon phases with different applications.https://doi.org/10.1038/s41524-021-00579-5
collection DOAJ
language English
format Article
sources DOAJ
author Yan Gao
Chengyong Zhong
Shengyuan A. Yang
Kai Liu
Zhong-Yi Lu
spellingShingle Yan Gao
Chengyong Zhong
Shengyuan A. Yang
Kai Liu
Zhong-Yi Lu
Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
npj Computational Materials
author_facet Yan Gao
Chengyong Zhong
Shengyuan A. Yang
Kai Liu
Zhong-Yi Lu
author_sort Yan Gao
title Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
title_short Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
title_full Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
title_fullStr Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
title_full_unstemmed Three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
title_sort three-dimensional acetylenic modified graphene for high-performance optoelectronics and topological materials
publisher Nature Publishing Group
series npj Computational Materials
issn 2057-3960
publishDate 2021-07-01
description Abstract Seeking carbon phases with versatile properties is one of the fundamental goals in physics, chemistry, and materials science. Here, based on the first-principles calculations, a family of three-dimensional (3D) graphene networks with abundant and fabulous electronic properties, including rarely reported dipole-allowed truly direct band gap semiconductors with suitable band gaps (1.07–1.87 eV) as optoelectronic/photovoltaic materials and topological nodal-ring semimetals, are proposed through stitching different graphene layers with acetylenic linkages. Remarkably, the optical absorption coefficients in some of those semiconducting carbon allotropes express possibly the highest performance among all of the semiconducting carbon phases known to date. On the other hand, the topological states in those topological nodal-ring semimetals are protected by the time-reversal and spatial symmetry and present nodal rings and nodal helical loops topological patterns. Those newly revealed carbon phases possess low formation energies and excellent thermodynamic stabilities; thus, they not only host a great potential in the application of optoelectronics, photovoltaics, and quantum topological materials etc., but also can be utilized as catalysis, molecule sieves or Li-ion anode materials and so on. Moreover, the approach used here to design novel carbon allotropes may also give more enlightenments to create various carbon phases with different applications.
url https://doi.org/10.1038/s41524-021-00579-5
work_keys_str_mv AT yangao threedimensionalacetylenicmodifiedgrapheneforhighperformanceoptoelectronicsandtopologicalmaterials
AT chengyongzhong threedimensionalacetylenicmodifiedgrapheneforhighperformanceoptoelectronicsandtopologicalmaterials
AT shengyuanayang threedimensionalacetylenicmodifiedgrapheneforhighperformanceoptoelectronicsandtopologicalmaterials
AT kailiu threedimensionalacetylenicmodifiedgrapheneforhighperformanceoptoelectronicsandtopologicalmaterials
AT zhongyilu threedimensionalacetylenicmodifiedgrapheneforhighperformanceoptoelectronicsandtopologicalmaterials
_version_ 1721296342057222144