Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions

Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions

Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four...

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Bibliographic Details
Main Authors: Jhen-Yong Hong, Chen-Feng Hung, Kui-Hon Ou Yang, Kuan-Chia Chiu, Dah-Chin Ling, Wen-Chung Chiang, Minn-Tsong Lin
Format: Article
Language:English
Published: Nature Publishing Group 2021-03-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-84749-x

Internet

https://doi.org/10.1038/s41598-021-84749-x

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